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| 16N50C3 Infineon Technologies - SPP16N50C3 SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv, dt rated 2 Ultra low effective capacitances Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2 |
| 16N50C Vishay Siliconix - SIHF16N50C SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 68 17.6 21.8 Single D Low Figure-of-Merit Ron x Qg 0.38 100 % Avalanche Tested Gate Charge Improved Trr, Qrr Improved Compliant to RoHS Directive 2002, 95, EC G D S GD S D2PAK |
Related Information
| 16N50C SIHF16N50C - Vishay Siliconix SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 68 17.6 21.8 Single D Low Figure-of-Merit Ron x Qg 0.38 100 % Avalanche Tested Ga |
| 16N50C3 SPP16N50C3 - Infineon Technologies SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv, dt rated 2 Ultra low effective capacitanc |
Related Part Number
16S45 | 16N50C3 |16F877A | 16TTS12 |
1602A-1 | 16N50C3 |