Semiconductor Informations

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| 1SS106 Hitachi Semiconductor - Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS106 Absolute M |
| 1SS106 SEMTECH - SILICON SCHOTTKY BARRIER DIODE 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black |
| 1SS104 SILICON PLANAR TYPE DIODE - Toshiba Semiconductor |
| 1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur |