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1SS106 Hitachi Semiconductor - Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS106 Absolute M
1SS106 SEMTECH - SILICON SCHOTTKY BARRIER DIODE

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black


Related Information


1SS104 SILICON PLANAR TYPE DIODE - Toshiba Semiconductor


1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur




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