Semiconductor Informations
File Download: 3DD1555.PDF
| 3DD1555 ETC - NPN Transistor ª¾§· Æ÷¼þ 3DD1555 Æ · ´ ¹ ¿ ¶ ¨ ¼ Ð ¾§ ¹ 1 Ø ¸ 3DD1555 ¹ ¹ Ø Æ ß¸¹ ´÷ ¿ ¶ عª¿ ½¹ º ± º ÐØ ÷ ½ Ð°× · ¡Ð÷ NPN ¹ ´¹ ´·ß¸ Ð §¾ ¹ ÷ ÷× ª 21 ´ ² ³ Ð ¸ ²·Æ ² æ ¨ ½ TO-3P(H)IS 15.5max 5.5max 3max 3.6 4.5 2 ÐØ Tamb= 25 ² ¼ ¼ ¼ ¼ ¼ |
| 3DD1555 JILIN SINO - CASE-RATED BIPOLAR TRANSISTOR CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) Package TO-3P(H)IS APPLICATIONS - - Horizontal deflection output for color TV. FEATURES z3DD1555 NPN - 3DD1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, , triple diffus |
| 3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th |
| 3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. |
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