Semiconductor Informations

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| C2183 Cambridge Semiconductor - power controller Design Guide C2183 Design Guide C2183 Design Guide DG-5479-1212 17-Dec-2012 Preliminary Preliminary Cambridge Semiconductor Ltd 2012 Page 1 Confidential DG-5479-1212 17-Dec-2012 C2183 Design Guide Contents 1 INTRODUCTION .........................................................................................................4 1.1 Purpose ................................................................... |
| C2120 NPN Transistor - JIANGSU CHANGJIANG JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES - High DC Current Gain - Complementary to 2SA950 TO 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA T |
| C2120 Silicon NPN Epitaxial Type Transistor - Toshiba Semiconductor 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter |