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Search K2800 Datasheet (PDF)
Essentra
WCK-280-01A4-RT
Cable Clamp; Adhesive Mnt; Cord Clip; INSIDE-H.22XW.26IN; BASE-L.75XW.75IN
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 131 | 0.74 | Visit Site | ||
| Mouser | 340 | 0.74 | Visit Site | ||
| DigiKey | 630 | 0.74 | Visit Site | ||
| UnikeyIC | 980 | 9.1095 | Visit Site | ||
| Unikeyic (ICkey) | 980 | 9.1095 | Visit Site | ||
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File Download: K2800.PDF
[ Descriptions ]
| K2800 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK2800 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate t |
Related Information
| K2800 MOSFET ( Transistor ) - 2SK2800 - Hitachi Semiconductor 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain ( |
| K2803 MOSFET ( Transistor ) - 2SK2803 - Sanken 2SK2803 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) |
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