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MMBT5550LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 140 V, 600 mA, 225 mW, SOT-23, Surface Mount
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[ Descriptions ]
| MMBT5550LT1 Motorola Semiconductors - High Voltage Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1, D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 |
| MMBT5550LT1 ON - High Voltage Transistors(NPN Silicon) MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http:, , onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER Pb Free Packages are Available MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Maxi |
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