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| MRF555 New Jersey Semiconductor - Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro |
| MRF555 Motorola Semiconductors - NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555, D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MH- Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads f |
Related Information
| MRF136 N-CHANNEL MOS BROADBAND RF POWER FET - Tyco Electronics SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136, D The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large signal amplifier and oscillator applications up to 400 MH- range, in single ended configuration. Guaranteed 28 |
| MRF136 N-CHANNEL MOS BROADBAND RF POWER FETs - Motorola Semiconductors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136, D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MH- range, in either single ended or push pull |
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