An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
Part Number: 14C40L, IRGB14C40L
Function: 430V, 20A, IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Package: TO-263AB, TO-264AA, TO-220AB Type
Manufacturer: International Rectifier
Images:
Description
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.
Features:
Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
Absolute Maximum Ratings:
Parameter Max Clamped 20 14 1 10 Clamped 125 54 – 40 to 175 – 40 to 175 6 11.5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40L IRGSL14C40L IRGB14C40L BVCES = 370V min, 430V max IC @ TC = 110°C = 14A VCE(on) typ= 1.2V @7A @25°C IL(min)=11.5A @25°C,L=4.7mH Gate R1 R2 Description Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.5K ohm A L = 4.7mH, T = 25°C PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC www.irf.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Junction-to-Case (Fig.11) Page 1 4/7/2000 […]
14C40L PDF Datasheet
