7342EK MOSFET is suitable for use as a desktop computer power management and DC/DC converter.
Part Number: SM7342EKKP
Function: 30V, Dual N-Channel MOSFET
Package: DFN5X6 Type
Manufacturer: Sinopower Semiconductor ( www.sinopowersemi.com )
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Description
7342EK is a dual N-channel enhancement-mode MOSFET in a DFN5x6G-8_EP2 package, integrating two power MOSFET dies with a 30V drain-source rating and optimized low-resistance switching characteristics. Channel 1 provides up to 67A continuous drain current with RDS(ON) of 4.3mΩ at VGS=10V, while Channel 2 provides up to 100A with RDS(ON) of 2mΩ at VGS=10V and includes an integrated Schottky diode. Typical applications include desktop computer power management, DC/DC converters, high-current load switching, and compact power conversion systems where low conduction loss and reduced PCB area are important.
Features
- Channel 1 supports up to 67A continuous drain current at TC=25°C
- Channel 2 supports up to 100A continuous drain current at TC=25°C
- Channel 1 includes ESD protection
- Channel 2 includes an integrated Schottky diode
- 100% UIS and Rg tested
- Low Qg and Qgd for high-speed switching
- Low RDS(ON) for reduced conduction losses
- Dual-die construction minimizes PCB space requirements
- Maximum junction temperature of 150°C
- Reliable and rugged construction for power switching applications
Pinout
Absolute Maximum Ratings (Tc = 25 °C)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 30 | V |
| Gate-Source Voltage, Channel 1 | VGSS | ±20 | V |
| Gate-Source Voltage, Channel 2 | VGSS | ±12 | V |
| Continuous Drain Current, Channel 1 at TC=25°C | ID | 67 | A |
| Continuous Drain Current, Channel 2 at TC=25°C | ID | 100 | A |
| Continuous Drain Current, Channel 1 at TC=100°C | ID | 42 | A |
| Continuous Drain Current, Channel 2 at TC=100°C | ID | 86 | A |
| Pulse Drain Current, Channel 1 | IDM | 268 | A |
| Pulse Drain Current, Channel 2 | IDM | 400 | A |
| Diode Continuous Forward Current, Channel 1 | IS | 14 | A |
| Diode Continuous Forward Current, Channel 2 | IS | 28 | A |
| Maximum Power Dissipation, Channel 1 at TC=25°C | PD | 31.25 | W |
| Maximum Power Dissipation, Channel 2 at TC=25°C | PD | 62.5 | W |
| Maximum Power Dissipation, Channel 1 at TC=100°C | PD | 12.5 | W |
| Maximum Power Dissipation, Channel 2 at TC=100°C | PD | 25 | W |
| Maximum Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | TSTG | -55 to 150 | °C |
| Thermal Resistance, Junction to Case, Channel 1 | RθJC | 4 | °C/W |
| Thermal Resistance, Junction to Case, Channel 2 | RθJC | 2 | °C/W |
| Continuous Drain Current, Channel 1 at TA=25°C | ID | 14 | A |
| Continuous Drain Current, Channel 2 at TA=25°C | ID | 22 | A |
| Continuous Drain Current, Channel 1 at TA=70°C | ID | 11 | A |
| Continuous Drain Current, Channel 2 at TA=70°C | ID | 18 | A |
| Pulse Drain Current, Channel 1 at TA=25°C | IDM | 56 | A |
| Pulse Drain Current, Channel 2 at TA=25°C | IDM | 88 | A |
| Maximum Power Dissipation, Channel 1 at TA=25°C | PD | 1.39 | W |
| Maximum Power Dissipation, Channel 2 at TA=25°C | PD | 1.67 | W |
| Thermal Resistance, Junction to Ambient, Steady State, Channel 1 | RθJA | 90 | °C/W |
| Thermal Resistance, Junction to Ambient, Steady State, Channel 2 | RθJA | 75 | °C/W |
| Avalanche Current, Single Pulse, L=0.1mH, Channel 1 | IAS | 24 | A |
| Avalanche Current, Single Pulse, L=0.1mH, Channel 2 | IAS | 45 | A |
| Avalanche Energy, Single Pulse, L=0.1mH, Channel 1 | EAS | 28.8 | mJ |
| Avalanche Energy, Single Pulse, L=0.1mH, Channel 2 | EAS | 101.25 | mJ |
Working Principle
- SM7342EKKP integrates two independent N-channel enhancement-mode MOSFET dies into a single compact package to reduce PCB area and simplify high-current power-stage layouts
- Applying a positive gate-source voltage creates a conductive channel and reduces the drain-source resistance, allowing high current to flow with low conduction loss
- Channel 1 is optimized for high-current switching and incorporates ESD protection for improved robustness during handling and circuit operation
- Channel 2 combines a very low RDS(ON) MOSFET with an integrated Schottky diode, providing a low-loss current path for switching converter applications
- The extremely low RDS(ON) values reduce conduction losses according to the I²R relationship, which is particularly important in high-current DC/DC converters
- Low Qg and Qgd reduce the charge required to switch the MOSFET gates and help improve switching speed and overall converter efficiency
- The integrated Schottky diode in Channel 2 can provide a low-forward-voltage freewheeling path during appropriate switching intervals
- The 100% UIS testing and avalanche specifications provide additional robustness against controlled inductive switching transients
Design Notes
- Keep the drain-source voltage below the 30V VDSS rating, including switching overshoot and transient conditions
- Observe the different gate-source voltage limits of the two channels, with Channel 1 rated at ±20V and Channel 2 rated at ±12V
- Use an appropriate gate-driver voltage to achieve the specified low RDS(ON) values while avoiding excessive gate voltage
- Keep gate-drive loops short and minimize parasitic inductance to reduce ringing and unwanted gate-voltage overshoot
- Use low-impedance PCB copper paths for the high-current drain and source connections to minimize additional conduction loss
- Take advantage of the Kelvin-like or exposed-pad package layout where appropriate to improve thermal and electrical performance
- Account for both MOSFET conduction loss and switching loss when calculating junction temperature
Applications
- Desktop computer power management
- DC/DC converters
- High-current switching regulators
- Power management systems
- Load switching
- Battery power conversion
- High-frequency switching power supplies
- Compact synchronous power stages
- Low-loss power conversion circuits
Frequently Asked Questions
- What is the maximum drain-source voltage? The common VDSS rating is 30V for both channels
- What is the RDS(ON) of Channel 1? Channel 1 has a maximum RDS(ON) of 4.3mΩ at VGS=10V and 7.2mΩ at VGS=4.5V
- What is the RDS(ON) of Channel 2? Channel 2 has a maximum RDS(ON) of 2mΩ at VGS=10V and 2.5mΩ at VGS=4.5V
- What is the continuous drain current? At TC=25°C, Channel 1 is rated for 67A and Channel 2 is rated for 100A under the specified conditions
- Does 7342EK include a diode? Yes, Channel 2 includes an integrated Schottky diode for appropriate power-switching and freewheeling applications
7342EK Datasheet PDF Download ( SM7342EKKP )
