This is an NPN bipolar junction transistor designed for general purpose amplifier and switching applications.
Part Number: 2SD2394
Function: 60V, 3A, NPN Transistor
Package: TO-220F Type
This is Silicon 60V, 3A, NPN Power Transistor. The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
1. Suitable for a wide range of applications
2. Can handle relatively high current levels
3. Low saturation voltage allows for efficient switching applications
4. High DC current gain ensures good amplification performance
1. With TO-220F package
2. Low collector saturation voltage
3. Wide SOA (safe operating area)
4. Complement to type 2SB1565
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 80 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
This is a type of 120V, 8A, NPN bipolar junction transistor (BJT) that is commonly used in electronic circuits for power amplification applications.
Part Number: 2SD718
Function: NPN bipolar junction transistor
Package: TO-3P Type
This is 120V, 8A, NPN Transistor. The 2SD718 is a powerful transistor that can be used in a wide range of electronic circuits for power amplification applications. Its high power and voltage handling capabilities, as well as its high gain, make it suitable for use in high-power audio amplifiers, power supplies, and motor control circuits.
1. NPN bipolar junction transistor
2. Maximum collector current of 8A
3. Maximum collector-base voltage of 120V
4. Maximum collector-emitter voltage of 120V
Advantages Vs Disadvantages
1. High power handling capabilities:
Maximum collector current of 8A, making it suitable for use in circuits that require high power handling capabilities.
2. High voltage handling capabilities: The transistor has a maximum collector-base voltage and a maximum collector-emitter voltage of 120V, making it suitable for use in circuits that require high voltage handling capabilities.
3. High gain: The transistor has a high current gain, which makes it suitable for use in power amplification applications.
1. Slow switching speed: Slow switching speed, which limits its use in applications that require fast switching.
3. High output capacitance: The transistor has a high output capacitance, which may limit its use in applications that require high-frequency response.