25LV010 PDF – 1 Megabit, Serial Flash Memory (EM25LV010)

Part Number: 25LV010, EM25LV010

Function: 1 Megabit (128K x 8) Serial Flash Memory

Package: 8-lead-SO (150 mil) type
Manufacturer: ELAN Microelectronics


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25LV010 image

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EM25LV010 1 Megabit (128K x 8) Serial Flash Memory SPECIFICATION General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control. The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information). The EM25LV010 devices are suitable for applications that require memories with convenient and economical updating of program, data or configurations, e.g., graphic cards, hard disk drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc. Features Single Power Supply • Full voltage range from 2.7 to 3.6 volts for both read and write operations • Regulated voltage range: 3.0 to 3.6 volts for both read and write operations Small block Erase Capability Block: Uniform 32K bytes Clock Rate • 33MHz (Maximum) Power Consumption • Active Current: 4mA (Typical) • Power-down Mode Standby current: 1µA (Typical) Page Program Features • Up to 256 Bytes in 2ms (Typical) Erase Features • Block-Erase Time: 40ms (Typical) • Chip-Erase Time: 40ms (Typical) Automatic Write Timing • Internal VPP Generation SPI Bus Compatible Serial Interface High Reliability: • Endurance cycles: 100K (Typical) • Data retention: 10 years Package Option • 8-lead-SO (150 mil) This specification is subject to change without further notice. (11.08.2004 V1.0) Page 1 of 30 Pin Assignments EM25LV010 1 Megabit (128K x 8) Serial Flash Memory SPECIFICATION S# Q W# VSS 18 2 SO8 7 3 Top View 6 45 VCC HOLD# C D Figure 0: Pin Assignments Pin Description Pin Name C D Q S# W# Hold# VDD VSS Function Serial Clock 1 Serial Data Input 2 Serial Data Output 3 Chip Select 4 Write Protect 5 Hold 6 Supply Voltage Ground Table 1: Pin Description 1 Serial Clock (C): This input pin provides the timing for serial input and output operations. Instructions, addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C). 2 Serial Data Input (D): This input pin provides a means for instructions, address […]

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25LV010 Datasheet

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