Part Number: 40T03GP, AP40T03GP
Function: N-Channel MOSFET, 30V, 28A, Transistor
Package: TO-263, TO-220 Type
Manufacturer: Advanced Power Electronics
Images:
40T03GP is N-Channel MOSFET, 30V, 28A.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features:
1. Simple Drive Requirement
2. Low Gate Charge
3. Fast Switching
4. RoHS Compliant
BVDSS RDS(ON) ID 30V 25mΩ 28A Description The through-hole version (AP40T03J) are (AP40T03GP) are available available for for low-profile low-profile applications. applications. G D G D S TO-263(S) TO-220(P) S Units V V A A A W W/℃ ℃ ℃
Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200331053-1/4 AP40T03GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.032 Max. Units 25 45 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A […]
40T03GP PDF Datasheet
