C828A Datasheet – 45V, 50mA, NPN Transistor

Part Number: C828A

Function: NPN Silicon Epitaxial Planar Transistor

Package: TO-92 Type

Manufacturer: SEMTECH

Images:C828A pinout


The C828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 45V
2. Collector to Emitter Voltage: Vceo = 45V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 50 mA
5. Power Dissipation: Ptot = 400 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj TS Value ST 2SC828 ST 2SC828A 30 45 25 45 7 100 50 400 150 -55 to +150 G S P FORM A IS AVAILABLE Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SC828 / 828A Characteristics at Tamb=25 OC DC Current Gain at IC=2mA, VCE=5V Current Gain Group Q R S Collector Base Breakdown Voltage at IC=10 […]

C828A pdf datasheet

C828A PDF Datasheet