Part Number: CS20N50, CS20N50A8H, CS20N50ANH
Function: 500V, 20A, Silicon N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Huajing Microelectronics
Images:
Description
CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features
1. Fast Switching
2. Low ON Resistance( Rdson≤0.3Ω )
3. Low Gate Charge ( Typical Data:63nC )
4. Low Reverse transfer capacitances( Typical:25pF )
5. 100% Single Pulse avalanche energy Test
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Power Dissipation: Pd = 230 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications：
1. Power switch circuit of electron ballast and adaptor.
CS20N50 PDF Datasheet
