CS20N50 PDF Datasheet – 500V, 20A, N-Ch, MOSFET, TO-220

Part Number: CS20N50, CS20N50A8H, CS20N50ANH

Function: 500V, 20A, Silicon N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Huajing Microelectronics


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CS20N50 image


CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.


1. Fast Switching

2. Low ON Resistance( Rdson≤0.3Ω )

3. Low Gate Charge ( Typical Data:63nC )

4. Low Reverse transfer capacitances( Typical:25pF )

5. 100% Single Pulse avalanche energy Test


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Power Dissipation: Pd = 230 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


1. Power switch circuit of electron ballast and adaptor.



CS20N50 Datasheet