K3502-01MR PDF – 600V, Transistor – 2SK3502-01MR

This post explains for the MOSFET.

The Part Number is K3502-01MR, 2SK3502-01MR.

The function of this semiconductor is 600V, N-Channel Power MOSFET.

The package is TO-220F Type

Manufacturer: Fuji Electric

Preview images :K3502-01MR pdf


An N-channel silicon power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes an N-channel region as the conducting channel. It is commonly used in power electronic circuits for applications such as power amplification, switching, and voltage regulation. […]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain Power Dissipation: Pd =2.16 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

K3502-01MR pinout datasheet


(1) N-Channel Configuration: The “N-channel” refers to the type of channel formed within the MOSFET. In an N-channel MOSFET, the channel is created in an N-type semiconductor material. When a positive voltage is applied to the gate terminal, it forms an electric field that controls the current flow between the source and drain terminals.

(2) Silicon Technology: The MOSFET is fabricated using silicon as the semiconductor material, which offers good electrical characteristics, high temperature tolerance, and high breakdown voltage capabilities.

(3) Power Handling Capability: N-channel power MOSFETs are specifically designed to handle higher power levels. They have a higher current-carrying capacity compared to small-signal MOSFETs, making them suitable for power applications.

1. High speed switching
2. Low on-resistance
3. No secondary breadown
4. Low driving power
5. Avalanche-proof


1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters

K3502-01MR PDF Datasheet