Part Number: M16JZ47, SM16JZ47A
Function: 600V, 16A, Triode Thyristor
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
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Description
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A AC POWER CONTROL Applications Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) l Isolation Voltage : IT (RMS) = 16A : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SM16GZ47 SM16GZ47A SM16JZ47 SM16JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 UNIT Repetitive Peak Off−State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) 2 16 150 (50Hz) 165 (60Hz) 112.5 50 5 0.5 10 2 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16GZ47 SM16JZ47 SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) MIN ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ― ― 10 4 TYP. ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 300 200 ― ― MAX 20 1.5 1.5 1.5 ― 30 30 30 ― 20 20 20 ― 1.5 ― 50 2.5 ― UNIT µA VGT VD = 12V, RL = 20Ω T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) V II III IV I IGT VD = 12V, RL = 20Ω Gate Trigger Current SM16GZ47A SM16JZ47A T2 (−) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) mA II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage SM16GZ47 SM16JZ47 SM16GZ47A SM16JZ47A SM16GZ47 SM16JZ47 SM16GZ47A SM16JZ47A VTM VGD IH Rth (j−c) ITM = 25A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise V V mA °C / W dv / dt V / µs ― ― V / µs ― Critical Rate of Rise of Off−State Voltage at Commutation (dv / dt) c VDRM = 400V, Tj = 125°C (di / dt) c = − 8.7A / ms MARKING – NUMBER *1 *2 *3 SYMBOL Toshiba Product Mark SM16GZ47, SM16GZ47A TYPE SM16JZ47, SM16JZ47A SM16GZ47A, SM16JZ47A M16GZ47 M16JZ47 A MARK *4 Example 8A : January 1998 8B : February 1998 8L : December 1998 2 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A 3 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A 4 2001-07-13 […]
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