P0903BDG Datasheet – 25V, 56A, N-Ch, MOSFET (Transistor)

This post explains for the semiconductor P0903BDG.

The Part Number is P0903BDG.

The Package is TO-252 Type

The function of this transistor is N-Channel Mode MOSFET.

Manufacturer: UNIKC

Images:

P0903BDG datasheet transistor

Description

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 56 35 160 Avalanche Current IAS 34 Avalanche Energy L=0.1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 49 20 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.55 63 UNITS °C / W REV 1.0 1 2014/5/7 P0903BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS […]

Pinout

P0903BDG pinout

P0903BDG Datasheet

P0903BDG pdf