Part Number: SE1020W
Function: 1.25 Gb/s Transimpedance Amplifier Product Preview
Manufacturer: SiGe Semiconductor Inc.
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Description
SE1020W 1.25 Gb/s Transimpedance Amplifier Product Preview Applications Gigabit-Ethernet systems, test equipment and modules OC-24 fibre optic modules and line termination Fibre Channel optical systems Product Description SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. SiGe Semiconductor’s SE1020W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features differential outputs and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3. Features Single +3.3 V power supply Power dissipation = 110 mW (typ) Input noise current = 180 nA rms when used with a 0.7 pF detector Transimpedance gain = 4.0 kΩ into a 50 Ω load (differential) On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk Differential 50 Ω outputs Bandwidth (-3 dB) = 1.2 GHz Wide data rate range = 50 Mb/s to 1.25 Gb/s Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC) Minimal external components, supply decoupling only Operating junction temperature range = -40°C to +125°C Ordering Information Type SE1020W Package Bare Die Remark None Functional Block Diagram SE1020 TzAmp 1.25 Gb/s Automatic Gain Control Integrator Rectifier VCC or +ve supply Input Current TZ_IN Rf 50 Ω Tz Amp Output Driver OUTP OUTN 50 Ω Bandgap Reference 42-DST-01 Rev 1.3 May 27/02 Confidential 1 of 7 SE1020W 1.25 Gb/s Transimpedance Amplifier Product Preview Bondpad Diagram VCC 1 10 VCC Top View 9 TZ_IN 2 8 OUTN OUTP 3 VEE2 4 VEE1 5 VEE1 6 VEE1 7 VCC Bondpad Description Pad No. 1 2 3 4 5 6 7 8 9 10 Name VCC TZ_IN VEE2 VEE1 VEE1 VEE1 VCC OUTN OUTP VCC Description Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one pad needs to be bonded. Input pad (connect to photodetector anode). Negative supply (0V) – Note this is separate ground for the input stage, which is AC coupled on chip. There is no DC current through this pad. Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad needs to be bonded. Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad needs to be bonded. Negative supply (0V), pads 4, 5 & 6 are connected on chip. Only one pad needs to be bonded. Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one pad needs to be bonded. Negative differential voltage output. Positive differential voltage output. Positive supply (+3.3 V), pads 1, 7 & 10 are connected on chip. Only one pad needs to be bonded. 42-DST-01 Rev 1.3 May 27/02 Confidential 2 of 7 SE1020W 1.25 Gb […]
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