memory

AM29F400AT Datasheet PDF – 4 Megabit Erase Flash Memory

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Part Number: AM29F400AT

Function: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory

Package: 44 pin SO, 48 pin TSOP type

Manufacturer: Advanced Micro Devices

Pinouts:

AM29F400AT datasheet

 

Description

The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F400A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCCsupply. 12.0 Volt VPPis not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

Features

1. 5.0 V ±10% for read and write operations
(1)  Minimizes system level power requirements
2. Compatible with JEDEC-standards
(1)  Pinout and software compatible with single-power-supply flash
(2) Superior inadvertent write protection
3. Package options
(1) 44-pin SO
(2) 48-pin TSOP
4. Minimum 100,000 write/erase cycles guaranteed
5. High performance
(1)  60 ns maximum access time
6. Sector erase architecture
(1) One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes
(2) Any combination of sectors can be erased. Also supports full chip erase.
7. Sector protection
(1)  Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment.
8. Embedded EraseAlgorithms
(1) Automatically preprograms and erases the chip or any sector
9. Embedded ProgramAlgorithms
(1) Automatically programs and verifies data at specified address
10. DataPolling and Toggle Bit feature for detection of program or erase cycle completion
11. Ready/Busyoutput (RY/BY)
(1)  Hardware method for detection of program or erase cycle completion
12. Erase Suspend/Resume
(1) Supports reading data from a sector not being erased
13. Low power consumption
(1) 20 mA typical active read current for Byte Mode
(2) 28 mA typical active read current for Word Mode
(3) 30 mA typical program/erase current
14. Enhanced power management for standby mode
(1)1 µA typical standby current
15. Boot Code Sector Architecture
(1) T = Top sector
(2) B = Bottom sector
16. Hardware RESET pin
(1) Resets internal state machine to the read mode

Other data sheets are available within the file: AM29F400

AM29F400AT Datasheet PDF Download


AM29F400AT pdf

 

GM76C8128CL Datasheet PDF – 8 bit CMOS Static RAM – LG

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Part Number: GM76C8128CL

Function: 131,072 words x 8 bit CMOS static RAM

Package: DIP, SOP, TSOP 32 Pin Type

Manufacturer: LG

Pinouts:

GM76C8128CL datasheet

 

Description

The GM76C8128CL/CLL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low power standby mode with /CS1 high or CS2 low and the output enable (/OE) allows fast memory access. Thus it is suitable for high speed and low power applications, especially where battery back-up is required.

 

Features

1. Fast Speed : 55/70/85ns
2. Completely Static RAM : No Clock or Timing Strobe Required
3. Equal Access and Cycle Time
4. TTL compatible inputs and outputs
5. Capability of Battery Back-up Operation

Other data sheets are available within the file: GM76C8128, GM76C8128CLE-55, GM76C8128CLL

GM76C8128CL Datasheet PDF Download


GM76C8128CL pdf