AM29F800BB-90EC Datasheet – 8Mbit, Flash Memory – AMD

Part Number: AM29F800BB-90EC

Function: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

Package: 48 TSOP, FBGA, 44 SO Type

Manufacturer: Advanced Micro Devices

Images :

AM29F800BB-90EC datasheet

 

Description

The Am29F800B in Known Good Die (KGD) form is a 8 Mbit, 5.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

Pinouts:

AM29F800BB-90EC pinout

Features

The Am29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288words. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt Vcc supply. A 12.0 V VPPis not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

 

Other data sheets are available within the file: AM29F800BB, AM29F800BB-120EC, AM29F800BB-120ECB, AM29F800BB-120EE, AM29F800BB-120EEB

AM29F800BB-90EC Datasheet PDF Download


AM29F800BB-90EC pdf

AT49BV161-70TI Datasheet PDF – 16-Megabit Flash Memory

Part Number: AT49BV161-70TI (AT49BL160 / AT49LV161 Series)

Function: 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

Package: TSOP 48 Pin

Manufacturer: Atmel Corporation

Pinouts:

AT49BV161-70TI datasheet

 

Description

The AT49BV161-70TI is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 – I/O15; the x8 data appears on I/O0 – I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages.

Features

1. Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
2. Access Time – 70 ns
3. Sector Erase Architecture
(1) Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
(2) Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
4. Fast Word Program Time – 20 μs
5. Fast Sector Erase Time – 300 ms

components

Other data sheets are available within the file: AT49BV160, AT49BV160-70CI, AT49BV160-90CI, AT49BV160-90TI

AT49BV161-70TI Datasheet PDF Download

AT49BV161-70TI pdf