24C16 Datasheet PDF – 16KBit, EEPROM Memory, 8 Pin

Part Number: 24C16

Function: SERIAL 16K (2K x 8) EEPROM

Package: DIP, SOP, TSSOP 8 Pin Type

Manufacturer: STMicroelectronics

Image:

24C16 datasheet

 

Description

The 24C08 / 24C16 provides 8192/16384 bits of serial electrically erasable and programmable
read-only memory (EEPROM) organized as 1024/2048 words of 8 bits each The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

1. Low-voltage Operation : 1.8 (VCC = 1.8V to 5.5V)

2. Operating Ambient Temperature: -40°C to +85°C

3. Internally Organized 1024 X 8 (8K), 2048 X 8 (16K)

4. Two-wire Serial Interface

5. Schmitt Trigger, Filtered Inputs for Noise Suppression

6. Bidirectional Data Transfer Protocol

7. 100 KHz (1.8V) and 400 kHz (2.7V, 5V)Compatibility

8. Write Protect Pin for Hardware Data Protection

9. 16-byte Page (8K, 16K) Write Modes

10. Partial Page Writes Allowed

11. Self-timed Write Cycle (5 ms max)

Pinouts:

components

 

24C16 Datasheet PDF Download


24C16 pdf

Other data sheets are available within the file: 2416, 24W16, 25C16, 25W16, ST24C16

AT45DB041E Datasheet PDF – 4-Mbit, DataFlash Memory

Part Number: AT45DB041E

Function: 4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum SPI Serial Flash Memory

Package: SOIC, UDFN, UBGA 8 Pin Type

Manufacturer: Adesto Technogies

Pinouts:

AT45DB041E datasheet

 

Description

The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.

The AT45DB041 also supports the RapidS serial interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 pages of 256 bytes or 264 bytes each.

In addition to the main memory, the AT45DB041E also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed.

Interleaving between both buffers can dramatically increase a system’s ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

Features

1. Single 1.65V – 3.6V supply

2. Serial Peripheral Interface (SPI) compatible
(1) Supports SPI modes 0 and 3
(2) Supports RapidS operation

3. Continuous read capability through entire arrayUp to 85MHz

4. Low-power read option up to 15 MHz

5. Clock-to-output time (tV) of 6ns maximum

Other data sheets are available within the file:

AT45DB041E-MHN2B-B, AT45DB041E-SHN2B-B, AT45DB041E-SSHN2B-B

 

AT45DB041E Datasheet PDF Download


AT45DB041E pdf