memory

K9F2G08U0C PDF Datasheet – 2Gb C-die NAND Flash Memory

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Part Number: K9F2G08U0C

Function: 2Gb (256Mx8bit) NAND Flash Memory

Package: TSOP1 48 Pin, 63FBGA Type

Manufacturer: Samsung

Images:
components

Description

ffered in 256Mx8bit, the K9F2G08U0C is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.  [ .]

Features

1. Voltage Supply : 3.3V device(K9F2G08U0C): 2.70V ~ 3.60V

2.  Organization
(1) Memory Cell Array : (256M + 8M) x 8bit
(2) Data Register : (2K + 64) x 8bit

3. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (128K + 4K)Byte

K9F2G08U0C Datasheet

AM29LV200 Datasheet PDF – 2 Mbit, Flash Memory – AMD

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Part Number: AM29LV200

Function: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) Boot Sector Flash Memory

Package: TSOP 48, SO 44 Pin Type

Manufacturer: Advanced Micro Devices

Pinouts:

AM29LV200 datasheet

 

Description

The AM29LV200 is a 2 Mbit, 3.0 volt-only Flash memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

Features

1. Single power supply operation

(1) Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
(2) Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

2. High performance
(1) Full voltage range: access times as fast as 100 ns
(2) Regulated voltage range: access times as fast as 90 ns

3. Erase Suspend/Erase Resume
(1) Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

 

Other data sheets are available within the file:

AM29LV200B-100EC, AM29LV200B-100ECB, AM29LV200B-100EE, AM29LV200B-100EI

AM29LV200 Datasheet PDF Download


AM29LV200 pdf