memory

AM29F010-70PC Datasheet – 1 Mbit, Flash Memory – AMD

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Part Number: AM29F010-70PC

Function: 1 Mbit (128 K x 8-Bit) , Uniform Sector Flash Memory

Package: 32-Pin Plastic DIP

Manufacturer: Advanced Micro Devices

Images :

AM29F010-70PC datasheet

Description

The AM29F010-70PC is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The bytewide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

Pinout:

AM29F010-70PC pinout

Featues :

1. Single power supply operation
(1)  5.0 V ± 10% for read, erase, and program operations
(2) Simplifies system-level power requirements

2. High performance
(1) 45 ns maximum access time

3. Flexible sector architecture
(1) Eight uniform sectors
(2) Any combination of sectors can be erased
(3) Supports full chip erase

Ordering Information

AM29F010-70PC ordering information

Other data sheets are available within the file:

AM29F010-120, AM29F010-120DGC, AM29F010-120DGC1, AM29F010-120DGI, AM29F010-120DGI1

AM29F010-70PC Datasheet PDF Download


AM29F010-70PC pdf

 

K9GAG08U0E PDF Datasheet – 16Gb NAND Flash Memory

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This post explains for the NAND Flash Memory K9GAG08U0E.

The Part Number is K9GAG08U0E.

The Pacakge : TSOP 48 Pin Type

The function of this semiconductor is 16Gb E-die NAND Flash.

Manufacturer: Samsung

Images:

K9GAG08U0E datasheet flash memory

Description

The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 1.2ms on the 8,628-byte page and an erase operation can be performed in typical 1.5ms on a (1M+54.5K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.

The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9GAG08U0E′s extended reliability of P/E cycles which are presented in the Qualification report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. […]

Pinout

K9GAG08U0E pinout samsung

Features

• Voltage Supply
– 3.3V Device : 2.7V ~ 3.6V
• Organization
– Memory Cell Array : (2,076M x 110.49K) x 8bit
– Data Register : (8K + 436) x 8bit
• Automatic Program and Erase
– Page Program : (8K + 436)Byte
– Block Erase : (1M + 54.5K)Byte
• Page Read Operation
– Page Size : (8K + 436)Byte
– Random Read : 400μs(Max.)
– Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time
– Program time : 1.2ms(Typ.)
– Block Erase Time : 1.5ms(Typ.)

K9GAG08U0E Datasheet