NPN archives - Page 451 of 1048

Part Number: C3202, KTC3202, 2SC3202 Datasheet

Description

EPITAXIAL PLANAR NPN TRANSISTOR

Manufacturer: Korea Electronics

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Applications

1. General Purpose

2. Switching Application

Features

1. Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA.

2. Complementary to KTA1270.
Pinout

Maximum Ration ( Ta=25’C)

1. Collector-Base Voltage : VCBO = 35 V

2. Collector-Emitter Voltage :VCEO = 30 V

3. Emitter-Base Voltage : VEBO = 5 V

4. Collector Current : IC = 500 mA

5. Base Current : IE = -500 mA

6. Collector Power Dissipation : PC = 625 mW

Part Number: C1383, 2SC1383

Function: Silicon NPN Epitaxial Planar type Transistor

Manufacturer: Panasonic

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Description

1. For low-frequency power amplification and driver amplification

2. Complementary to 2SA0683, 2SA0684

Features

1. Low collector-emitter saturation voltage VCE(sat)

2. Complementary pair with 2SA0683, 2SA0684

Pinout

Absolute Maximum Ratings Ta=25°C

1. Collector-base voltage(Emitter open) : Vcbo = 30V

2. Collector-emitter voltage(Base open) : Vceo = 25V

3. Emitter-base voltage (Collector open) : Vebo = 5V

4. Collector current : IC = 1A

5. Peak collector current : ICP = 1.5 A

6. Collector power dissipation : PC = 1W