D2627 PDF – 800V, 6A, NPN Transistor, 2SD2627, Sanyo

Part Number: D2627

Function: 800V, 6A, NPN Transistor

Package: TO-220FI Type

Manufacturer: Sanyo Semicon Device


1 page
D2627 transistor pinout


The D2627 is 800V, 6A, NPN Triple Diffused Planar Silicon Transistor.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

Characteristics of NPN Transistors:

1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.



• High speed.

• High breakdown voltage(VCBO=1500V).

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode


2 page
D2627 pdf datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500V

2. Collector to Emitter Voltage: Vceo = 800V

3. Emitter to Base Voltage: Vebo = 6V

4. Collector Current: Ic = 6A

5. Collector Dissipation: Pc = 2W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. Color TV Horizontal Deflection Output

D2627 PDF Datasheet

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K2508 PDF Datasheet – 250V, 13A, N-Ch, MOSFET, Transistor

Part Number: K2508, 2SK2508 ( = TK13A25D )

Function: 250V, 13A, N-Channel MOSFET

Package: TO 220, TO-220SIS Type

Manufacturer: Toshiba Semiconductor


K2508 MOSFET Transistor


K2508 is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 13 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)

4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS =250 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C): PD = 45 W

5. Single pulse avalanche energy : EAS = 148 mJ

6. Avalanche current : IAR = 13 A

7. Repetitive avalanche energy : EAR = 4.5 mJ


K2508 datasheet pinout



1. Switching Regulator

2. DC-DC Converter and Motor

K2508 PDF Datasheet


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