This post explains for the transistor.

The Part Number is C3298, 2SC3298.

The function of this semiconductor is 160V, 1.5A, NPN Transistor.

The package is TO-220Fa Type

Manufacturer: JMnic

Preview images :

Description

This is Silicon Power NPN Transistor. C3298 transistor is an NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that is fabricated using silicon as the semiconductor material and is designed to handle high-power applications. These transistors are specifically engineered to handle higher voltages, currents, and power dissipation compared to small-signal NPN transistors.

Silicon power NPN transistors are widely used in power amplifier circuits, motor control circuits, switching regulators, and other applications where high-power handling capability is required.

Features

1. With TO-220Fa package

2. Complement to type

3. 2SA1306, 2SA1306A, 2SA1306B

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 160 V

2. Collector to Emitter Voltage: Vceo = 160 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 20 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Power amplifier

2. Driver stage amplifier

 

1. Maximum Ratings: These define the absolute maximum values that the transistor can handle, such as maximum collector-emitter voltage (VCEO), maximum collector current (IC), and maximum power dissipation (Pd).

2. Current Gain: The current gain, denoted as hFE or β, specifies the amplification factor of the transistor. It indicates the ratio of the collector current (IC) to the base current (IB) when the transistor is operating in the active region.

3. Breakdown Voltage: The breakdown voltage, denoted as BVCEO, indicates the maximum voltage that can be applied between the collector and emitter without causing damage to the transistor.

4. Power Dissipation: This parameter specifies the maximum power that the transistor can safely dissipate without exceeding its thermal limits.

C3298 PDF Datasheet

This post explains for the transistor.

The Part Number is TTC5200.

The function of this semiconductor is NPN Triple Diffused TypeTransistor.

The package is TO-3P Type

Manufacturer: Toshiba

Preview images :

Description

The TTC5200 is Silicon NPN Triple Diffused Type Transistor.

A silicon NPN triple-diffused type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that is fabricated using silicon as the semiconductor material and employs a triple-diffusion process in its construction.

The term “triple-diffused” refers to the manufacturing technique used to create multiple diffused layers within the transistor structure. Diffusion is a process in semiconductor fabrication that involves introducing impurity atoms into the silicon material to modify its electrical properties.

In a triple-diffused transistor, there are three distinct diffusion regions within the transistor structure, each with a different impurity concentration. These diffusion regions are typically the emitter, base, and collector regions.

The triple-diffused structure offers several advantages over traditional bipolar transistors with single or double diffusion regions. It allows for better control of the transistor’s electrical characteristics, such as gain, breakdown voltage, and switching speed. The multiple diffusion layers help in reducing certain parasitic effects and optimizing transistor performance.

 

Features

1. High collector voltage: VCEO = 230 V (min)

2. Complementary to TTA1943

3. Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 230 V

2. Collector to Emitter Voltage: Vceo = 230 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 15 A

5. Collector Dissipation : Pc =150 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature […]

Applications:

1. Power Amplifier

TTC5200 PDF Datasheet