Part Number: 13007
Function: 430V, 8A, NPN Epitaxial Silicon Transistor
Package: TO-220 Type
Manufacturer: Elite
Images:
1 page
Description
This is NPN Epitaxial Silicon Transistor
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 8 A
5. Collector Dissipation : Pc = 80 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. HIGH VOLTAGE SWITCH MODE
TO-220 1. Base 2. Collector 3. Emitter Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Emitter Breakdown Voltage BVCEO Emitter Cut-off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat1) VCE(sat2) VCE(sat3) Base-emitter Saturation Voltage VBE(sat1) VBE(sat2) Output Capacitance COB Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tf – Pulse Test : PW < 300 s, Duty cycles < 2% IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50 Min Typ Max Unit 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µS 3 µS 0.7 µS Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Part No.: 13007 Page: 1 / 1 […]