25P40 Datasheet – 4 Mbit, Serial Flash Memory ( PDF )

Part Number: 25P40

Function: 3V, 4Mb, Serial Flash Embedded Memory

Package: SO8 Pin, VFQPN8 Pin Type

Manufacturer: Micron Technology

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25P40 datasheet pdf

 

Description

The 25P40 is an 4Mb (512Kb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high-speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz. It features an SPI-compatible interface with high-speed operation up to 75 MHz, flexible page programming, and sector-based erase architecture. Advanced write protection mechanisms and low-power modes make it suitable for industrial and automotive applications.

The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide.

The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command.

Features

  • 4 Mbit (512 KB) non-volatile Flash memory
  • SPI-compatible interface (up to 75 MHz)
  • Single supply voltage: 2.3V to 3.6V
  • Page program: 1 to 256 bytes per operation
  • Fast programming time: ~0.8 ms (typical)
  • Sector erase (512 Kbit): ~0.6 s (typical)
  • Bulk erase (entire chip): ~4.5 s (typical)
  • Deep power-down mode (~1 µA typical)
  • Hardware and software write protection (BP bits)
  • High endurance: >100,000 erase/write cycles per sector
  • JEDEC ID and optional unique device ID (UID)

Pinouts

25P40 pinout

Memory Organization

  • Total size: 4 Mbit (512 KB)
  • 8 sectors (each 512 Kbit / 64 KB)
  • Each sector contains 256 pages
  • Each page = 256 bytes

Functional Description

  • Supports standard SPI commands: READ, FAST READ, PAGE PROGRAM, SECTOR ERASE, BULK ERASE
  • Write Enable Latch (WEL) must be set before programming/erase
  • Status Register includes Write-In-Progress (WIP) and Block Protect (BP) bits
  • Allows continuous sequential read across memory boundaries
  • Deep power-down reduces standby current significantly

Design Notes

  • Respect page boundaries (256 bytes) during programming to avoid data wraparound
  • Use decoupling capacitor (0.1 µF) close to VCC pin
  • Ensure SPI timing meets high-speed requirements (signal integrity important above ~25 MHz)
  • Implement proper erase-before-write strategy for data integrity
  • Consider wear leveling for applications with frequent writes

How to Choose This Part

  • Select for moderate-density SPI Flash (4 Mbit class)
  • Ideal when high-speed read (up to 75 MHz) is required
  • Suitable for code storage with infrequent rewriting
  • Consider larger densities (e.g., 8Mb, 16Mb) for expanded storage needs

Typical Applications

  • Firmware storage (boot code, configuration)
  • Embedded systems and microcontrollers
  • Data logging and parameter storage
  • Industrial and automotive electronics

Alternative / Equivalent Products

  • W25Q40 (Winbond SPI Flash)
  • AT25DF041 (Microchip/Atmel equivalent)
  • MX25L4005 (Macronix SPI Flash)
  • SST25VF040 (Microchip SST series)

25P40 Datasheet PDF Download


25P40 pdf

Other data sheets are available within the file: M25P40, M25P40-VMN6PBA