Part Number: 4NF20L, STN4NF20L
Function: 200V, N-Ch, MOSFET, Transistor
Package: SOT-223 Type
Manufacturer: STMicroelectronics
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Description
STN4NF20L N-channel 200 V, 1.1 Ω , 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L ■ VDSS 200 V RDS(on) max. < 1.5 Ω ID 1A 2 100% avalanche tested Low gate charge Exceptional dv/dt capability 1 SOT-223 2 3 Application Switching applications Description This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Figure 1. Internal schematic diagram Table 1. Device summary Marking 4NF20L Package SOT-223 Packaging Tape and reel Order code STN4NF20L October 2010 Doc ID 17445 Rev 2 1/12 www.st.com 12 Contents STN4NF20L Contents 1 2 Electrical ratings . 3 Electrical characteristics . . 4 2.1 Electrical characteristics (curves).. 6 3 4 5 Test circuits .... 8 Package mechanical data . . 9 Revision history . . . 11 2/12 Doc ID 17445 Rev 2 STN4NF20L Electrical ratings 1 Electrical ratings Table 2. Symbol VGS ID ID IDM (1) PTOT(2) dv/dt (3) Absolute maximum ratings Parameter Gate-source voltage Drain current continuous TC = 25 °C Drain current continuous TC = 100 °C Drain current pulsed Total dissipation at TC = 25 °C Peak diode recovery voltage slope Operating junction temperature Storage temperature Value ± 20 1 0.63 4 3.3 20 - 55 to 150 Unit V A A A W V/ns °C Tj Tstg 1. Pulse width limited by safe operating area. 2. This value is rated according to Rthj-amb ≤ 10 sec. 3. Isd ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS. Table 3. Symbol Rthj-amb(1) Rthj-amb (2) Thermal data Parameter Thermal resistance junction to ambient 62.5 °C/W Value 38 Unit °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec). 2. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec). Table 4. Symbol IAR EAS Thermal data Parameter Avalanche current, repetetive or not repetetive Single pulse avalanche energy (2) (1) Value 1 90 Unit A mJ 1. Pulse width limited by TJMAX. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Doc ID 17445 Rev 2 3/12 Electrical characteristics STN4NF20L 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 200 1 50 ± 100 1 2 1.1 1.13 3 1.5 1.55 Typ. M […]
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