5N25Z PDF Datasheet – 3.8A, 250V, N-CHANNEL MOSFET

Part Number: 5N25Z

Function: 3.8A, 250V, LOGIC N-CHANNEL MOSFET

Package: TO-252 Type


Images:5N25Z PDF


An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanc ed techn ology to provid e customers with a minimum on-state resistance, hig h s witching spe ed and lo w gate charge. It can also withstand hig h e nergy pu lse i n the avala nche and commutation modes. The UT C 5N25Z is suitable for high efficie ncy s witching D C/DC converter, motor control and switch mode power supply.


1. RDS(ON)<1.2Ω @ VGS=10V

2. Low gate charge ( Typ=14nC)

3. Low CRSS ( Typ=6.0pF)

4. High switching speed

5. ESD Capability


5N25Z transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 3.8 A

4. Allowable Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


5N25Z PDF Datasheet