Part Number: K2508, 2SK2508 ( = TK13A25D )
Function: 250V, 13A, N-Channel MOSFET
Package: TO 220, TO-220SIS Type
Manufacturer: Toshiba Semiconductor
Images:
Description
K2508 is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 13 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS =250 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V
3. Gate-source voltage: VGSS = ±20 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 148 mJ
6. Avalanche current : IAR = 13 A
7. Repetitive avalanche energy : EAR = 4.5 mJ
Pinout
Applications:
1. Switching Regulator
2. DC-DC Converter and Motor
K2508 PDF Datasheet
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