IRL540N Datasheet – 100V, 36A, HEXFET MOSFET

IRL540N is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in electronic circuits as a switch or amplifier.

Function: 100V, 36A, HEXFET MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

For additional details, please refer to the preview image and the accompanying PDF file.

Images

IRL540N pinout datasheet

What is IRL540N?

It is designed to handle high currents and voltages, making it suitable for a wide range of applications. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

1. Maximum voltage rating of 100 volts
2. Maximum current rating of 36 amps
3. Low on-resistance (Rds(on))
4. Fast switching speed
5. High input impedance

Advantages

It is high current and voltage handling capabilities, which make it suitable for use in high-power circuits. Its fast switching speed also makes it ideal for use in circuits that require fast switching times.

Disadvantages

Its high input impedance can make it susceptible to electrostatic discharge (ESD) damage, and its sensitivity to voltage spikes and surges may require additional protective measures in some circuits.

Absolute maximum ratings ( Ta=25°C )

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 16 V

3. Drain current: ID = 36 A

4. Power Dissipation: Pd = 140 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRL540

IRL540N Datasheet PDF

IRL540N pdf

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IRF640 Datasheet PDF – 200V, 9A, HEXFET MOSFET

What is IRF640?

This is a power MOSFET used for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 200V and a current rating of 9A. The IRF640 has a low on-resistance of 0.40 Ohm, which allows it to handle high power and reduce power loss.

Function: HEXFET Power MOSFET ( VDSS = 200V, ID = 9A )

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:

 

IRF630 pinout datasheet

Description

This is HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 9A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The MOSFET is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is suitable for use in various electronic circuits, including power supplies, motor control circuits, and audio amplifiers.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. Fast Switching

4. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 74 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

IRF640 Datasheet PDF Download

IRF640 pdf