K2508 PDF Datasheet – 250V, 13A, N-Ch, MOSFET, Transistor

Part Number: K2508, 2SK2508 ( = TK13A25D )

Function: 250V, 13A, N-Channel MOSFET

Package: TO 220, TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Images:

K2508 MOSFET Transistor

Description

K2508 is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 13 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)

4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS =250 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C): PD = 45 W

5. Single pulse avalanche energy : EAS = 148 mJ

6. Avalanche current : IAR = 13 A

7. Repetitive avalanche energy : EAR = 4.5 mJ

Pinout

K2508 datasheet pinout

 

Applications:

1. Switching Regulator

2. DC-DC Converter and Motor

K2508 PDF Datasheet

 

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P10N60C PDF Datasheet – 600V, 9.5A, MOSFET, FQP10N60C

Part Number: P10N60C, FQP10N60C

Function: 600V, 9.5A, QFET MOSFET, Transistor

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Images:

1 page
mosfet P10N60C pdf pinout

Description

P10N60C is 600V, 9.5A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).
This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

3 page
transistor P10N60C datasheet

Features

1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V

2. Low gate charge ( typical 44 nC)

3. Low Crss ( typical 18 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Other data sheets are available within the file: FQP10N60C, FQPF10N60C

P10N60C PDF Datasheet

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