MOSFET

PAL007C Datasheet – MOSFET, Audio Amplifier ( PDF )

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This is one of the MOSFET types. This is a kind of the transistor

Part Number: PAL007C

Function: Power Audio MOSFET, Car Audio Amplifier IC

Package: ZIP 25 Pin

Manufacturer: Pioneer

See the preview image and the PDF file for more information.

Image :
PAL007C

Description

The PAL007C is Class AB Car Audio Amplifier.

An AB class audio power amplifier is a type of amplifier that combines the characteristics of Class A and Class B amplifiers. It is designed to provide improved efficiency compared to Class A amplifiers while maintaining good audio quality and reduced distortion compared to Class B amplifiers.

In an AB class amplifier, the input audio signal is split into two parts: a positive half-cycle and a negative half-cycle. Each half-cycle is amplified by a separate set of transistors (one for the positive half and another for the negative half) working in a push-pull configuration.

When it comes to power audio MOSFETs, there are several models that are commonly used in high-power audio amplifier applications. These MOSFETs are specifically designed to handle the demands of audio amplification, providing high power output with low distortion.

Here are a few examples of power audio MOSFETs:

IRFP240 and IRFP9240: These are popular complementary MOSFET pairs commonly used in high-power audio amplifier designs. The IRFP240 is an N-channel MOSFET, while the IRFP9240 is a P-channel MOSFET. They can handle high voltage and current levels and are known for their excellent audio performance.

IRFB4227 and IRFB4228: These MOSFETs from Infineon Technologies are designed for high-performance audio amplifiers. They offer high power handling, low on-resistance, and excellent linearity.

Features

  • Multipower BCD technology for robust automotive performance
  • MOSFET output stage for high efficiency and reliability
  • Excellent 2Ω load driving capability
  • Hi-Fi class low distortion characteristics
  • Low output noise for clear audio reproduction
  • Standby function for power saving
  • Mute function for noise-free switching
  • Bridge amplifier configuration for higher output power

PAL007C Pinout

PAL007C Datasheet

Applications

  • Car audio head units
  • Automotive infotainment systems
  • Speaker amplifier modules
  • In-vehicle entertainment systems
  • Aftermarket car audio upgrades

Related Posts

PAL007C equivalent ( = TDA7386)

The is 4 x 40W QUAD BRIDGE CAR RADIO AMPLIFIER.

The TDA7386 is a new technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high end car radio applications.

Thanks to the fully complementary PNP/NPN output configuration the TDA7386 allows a rail to rail output voltage swing with no need of bootstrap capacitors. The extremely reduced components count allows very compact sets.

PAL007C Datasheet Download PDF

PAL007C pdf

TDA7386 PDF

TDA7386 pdf

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2SK2611 Datasheet PDF – 900V, 9A, MOSFET, Transistor

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Part Number: 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

2SK2611 datasheet pdf

Description

The 2SK2611 is a high-voltage 900V N-channel enhancement-mode MOSFET designed for demanding power switching applications, typically available in a TO-3P or TO-247 package. It offers low on-resistance, high forward transfer admittance, and low leakage current, ensuring efficient operation in high-voltage environments. This device is widely used in DC-DC converters, motor drives, and high-power switching circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.2Ω (typ.)
  • High forward transfer admittance |Yfs|=7.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 900V
  • Enhancement-mode operation with Vth=2.0–4.0V
  • Suitable for high-power and high-voltage switching

Pinout

2SK2611 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 9 A
Power Dissipation Pd 150 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure sufficient gate drive voltage for full enhancement and low RDS(on)
  • Use proper heat sinking due to high power dissipation capability
  • Implement snubber or clamp circuits for inductive switching loads
  • Gate resistor recommended to control switching speed and reduce EMI
  • Verify safe operating area (SOA) during transient conditions

Typical Circuit Usage

  • High-voltage DC-DC converter switching stages
  • Motor drive and actuator control circuits
  • Relay driver circuits in industrial systems
  • Switch-mode power supplies (SMPS)
  • Power switching in high-voltage applications

How to Choose This Part

  • Select for high-voltage applications up to 900V
  • Suitable for moderate-to-high current switching up to 9A
  • Ensure RDS(on) meets efficiency requirements
  • Confirm thermal management strategy for high-power use
  • Use when robust switching and reliability are critical

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Industrial power supplies
  • High-voltage switching applications

Alternative / Equivalent Products

  • 2SK2610 (similar high-voltage MOSFET)
  • IRFPG50 (high-voltage MOSFET alternative)
  • STW9NK90Z (STMicroelectronics 900V MOSFET)
  • FQA9N90 (ON Semiconductor equivalent)
  • 2SK3563 (comparable N-channel MOSFET)

2SK2611 Datasheet PDF Download


2SK2611 pdf

Other data sheets are available within the file: K2611