5N50C PDF Datasheet – 500V, 4A, MOSFET – FQD5N50C

This post describes for the semiconductor 5N50C, FQD5N50C.

The function of this semiconductor is 500V N-Channel MOSFET.

The manufacturer of this parts is Fairchild Semiconductor.

See the preview image and the 5N50C Datasheet PDF file for more information.

5N50C pdf pinout

Description

This is 500V, N-Channel MOSFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

• 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V

• Low gate charge ( typical 18nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

5N50C datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4 A

4. Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

5N50C PDF Datasheet