60T03GH Transistor – 30V, 45A, N-Ch, MOSFET (AP60T03GH)

Part Number: 60T03GH, AP60T03GH

Function: 30V, 45A, N-Channel MOSFET

Package: TO-252, TO-251 Type
Manufacturer: Advanced Power Electronics


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60T03GH image

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AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 45A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 45 32 120 44 0.3 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810135 Free Datasheet http:/// AP60T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.03 25 12 4 7 10 9 58 18 6 200 135 1.4 Max. Units 12 25 3 1 250 ±100 20 16 2.1 V V/℃ mΩ mΩ V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA Gate Threshold Voltage Forward Transconductance 2 VDS=10V, ID=10A VDS=30V, VGS=0V o Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=20V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain (“Miller”) Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1135 1820 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. – Typ. 24 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR […]

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60T03GH Datasheet

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