60T03GH Transistor – 30V, 45A, N-Ch, MOSFET (AP60T03GH)

Part Number: 60T03GH, AP60T03GH

Function: 30V, 45A, N-Channel MOSFET

Package: TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics


60T03GH pinout datasheet



Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GJ) are available for low-profile applications.


1. Simple Drive Requirement
2. Low Gate Charge
3. Fast Switching
4.  RoHS Compliant G S D


BVDSS RDS(ON) ID 30V 12mΩ 45A  GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 45 32 120 44 0.3 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810135 Free Datasheet http:/// AP60T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.03 25 12 4 7 10 9 58 18 6 200 135 1.4 Max. Units 12 25 3 1 250 ±100 20 16 2.1 V V/℃ mΩ mΩ V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain (“Miller”) Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1135 1820 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. – Typ. 24 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR […]

60T03GH pdf

60T03GH PDF Datasheet