6414A Datasheet PDF – 30V, 30A, MOSFET ( AON6414A )

The 6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Part Number: AON6414A

Function: 30V N-Channel MOSFET

Package: DFN5X6 Type

Manufacturer: Alpha and Omega Semiconductor ( www.aosmd.com )

Images :

6414A datasheet pdf

Description

6414A is a 30V, 30A N-channel power MOSFET using trench technology and housed in a compact DFN 5×6 surface-mount package. It provides low RDS(ON) of less than 8mΩ at VGS=10V and less than 10.5mΩ at VGS=4.5V, together with low gate charge for efficient high-speed switching. Typical applications include DC-DC converters, buck and boost regulators, battery-powered load switches, portable electronics, and compact high-current power switching circuits.

Pinout

mosfet 6414A pinout AON6414A

Features

  • 30V N-channel power MOSFET
  • Trench technology
  • 30A continuous drain current capability
  • Low RDS(ON) of less than 8mΩ at VGS=10V
  • Low RDS(ON) of less than 10.5mΩ at VGS=4.5V
  • Low gate charge for efficient switching
  • Suitable for 4.5V gate-drive operation

Working Principle

  • AON6414A is an N-channel enhancement-mode MOSFET that controls current through the drain-source channel according to the applied gate-to-source voltage
  • When sufficient positive VGS is applied, the MOSFET turns on and provides a low-resistance path between drain and source
  • The trench MOSFET structure reduces channel resistance, allowing low RDS(ON) and efficient conduction at high current
  • The device maintains low conduction loss even with a 4.5V gate-drive voltage, making it suitable for logic-level switching systems
  • Low gate charge reduces the energy required to charge and discharge the gate during switching transitions
  • The integrated body diode provides a current path during appropriate reverse-current conditions in switching converter applications

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-to-source voltage VDSS 30 V
Gate-to-source voltage VGSS ±20 V
Continuous drain current ID 30 A
Total power dissipation PD 31 W
Avalanche energy EAR 31 mJ
Channel temperature TCH 150 °C
Storage temperature TSTG -55 to +150 °C

Applications

  • DC-DC converters
  • Buck converters
  • Boost converters
  • Battery-powered load switches
  • Portable electronic equipment
  • High-efficiency power switching circuits
  • Power management systems
  • Compact high-current switching applications

6414A Datasheet PDF Download

6414A pdf

onsemi
NTD6414ANT4G
Single N-Channel Power MOSFET 100V, 32A, 37mΩ
Powered by Octopart