A1930 PDF Datasheet – 180V, 2A, PNP Transistor, 2SA1930

This post explains for the PNP Transistor.

The Part Number is A19302, SA1930.

The function of this semiconductor is -180V, -2A, PNP Transistor.

Manufacturer: Toshiba Semiconductor


A1930 datasheet pinout


This Transistor is -180V, -2A, Silicon PNP Epitaxial Type Transistor. A1930 is one of the semiconductor components used in electrical engineering and electronic circuit design, belonging to the Bipolar Junction Transistor (BJT) family. The PNP transistor consists of three layers of semiconductor material: P-type, N-type, and P-type, each with different charges. The name PNP transistor stands for “Positive-Negative-Positive,” reflecting the characteristics of these three semiconductor layers.

1. Emitter: The emitter is the first layer and is made of P-type semiconductor material. The emitter serves as the primary source of current.

2. Base: The base is the second layer and is made of N-type semiconductor material. The base controls the current between the emitter and collector.

3. Collector: The collector is the third layer and is made of P-type semiconductor material. The collector collects the current, which flows from the emitter through the base.

PNP transistors find applications in amplifiers, switches, amplitude modulators, power amplifiers, and various circuit designs, playing a crucial role in electronic devices and circuitry.



1. High transition frequency: fT = 200 MHz (typ.)

2. Complementary to 2SC5171


1 page
A1930 pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 180 V

2. Collector to Emitter Voltage: Vceo = – 180 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 2 A

5. Collector Dissipation : Pc =  2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. Driver Stage Amplifier

2. Power Amplifier


A1930 PDF Datasheet