DG2N60 PDF – 600V, 2A, N-Channel MOSFET ( Datasheet )

Part Number: DG2N60


Package: TO-251, TO-252, TO-220, TO-220F, TO-126 Type

Manufacturer: DGME ( Jiangsu Dongguang Micro-electronics )


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DG2N60 image



The DG2N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.


1. Low Crss

2. Low gate charge

3. Fast switching

4. Improved ESD capability



1. High efficiency switch mode power supplies

2. Electronic lamp ballasts

3. UPS


DG2N60 PDF Datasheet

DG2N60 pdf