Part Number: K15A500, TK15A500, K15A50D, TK15A50D
Function: 500V, 15A, MOSFET, Transistor
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
1. N-Channel: The N-channel MOSFET has an N-type semiconductor channel between the source and drain terminals. When a positive voltage is applied to the gate terminal, it creates an electric field that controls the flow of current through the channel.
2. Enhancement Mode: Most N-channel MOSFETs operate in enhancement mode, which means the device requires a positive voltage at the gate to enable the channel and allow current flow between the source and drain terminals.
3. Voltage Ratings: Silicon N-channel MOSFETs are available in various voltage ratings, ranging from low-voltage devices (e.g., a few volts) to high-voltage devices (e.g., hundreds of volts). The voltage rating determines the maximum voltage the device can handle without breakdown.
4. Current Handling: MOSFETs have different current ratings, specifying the maximum continuous drain current they can handle without causing damage. These ratings vary based on the specific device model and package.
Features:
• Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.0 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150℃.[…]
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source Voltage: VDSS = 500 V
2. Gate to source Voltage: VGSS = ± 30 V
3. Drain current: ID = 15 A
4. Drain Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
K15A500 PDF Datasheet
