Part Number: K2662, 2SK2662
Function: 500V, 5A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
The K2662 is Silicon N Channel MOS Type Field Effect Transistor.
Applications:
1. DC−DC Converter, Relay Drive and Motor Drive
Features:
1. Low drain−source ON resistance: RDS (ON) = 1.35 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 4.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 3.57 62.5 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-02 2SK2662 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol […]
Absolute Maximum Ratings (Ta = 25°C):
1. Drain to source voltage : VDSS = 500V
2. Gate to source voltage : VGSS = ± 30V
3. Drain current : ID = 5A
4. Channel temperature : Tch = 150 °C
5. Storage temperature : Tstg = -55 to +150 °C
K2662 PDF Datasheet
