K3569 PDF – 600V, 10A, N-ch, MOSFET, Transistor

This post explains for the mosfet.

The Part Number is K3569, 2SK3569.

The function of this semiconductor is 600V, 10A, N-ch, MOSFET, Transistor.

Manufacturer: Toshiba Semiconductor

Images

K3569 transistor mosfet

Applications:

1. Switching Regulator

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K3569 image

Description

2SK3569 is Silicon N Channel MOS Type Field Effect Transistor.

Features

• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = 600 V
3. Drain current: ID =  10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 353 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

K3569 PDF Datasheet

K3569 pdf