K3569 PDF – 600V, 10A, N-ch, MOSFET, Transistor

This post explains for the N-Channel MOSFET.

The Part Number is K3569, 2SK3569.

The function of this semiconductor is 600V, 10A, N-channel MOSFET, Transistor.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor


K3569 transistor mosfet



K3569 is Silicon N Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.



• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)



K3569 pdf pinout


1. Switching Regulator


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = 600 V

3. Drain current: ID =  10 A

4. Drain power dissipation : PD = 45 W

5. Single pulse avalanche energy : Eas = 353 mJ

6. Avalanche curren : Iar = 10 A

7. Repetitive avalanche energy : Ear = 4.5 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

K3569 PDF Datasheet

K3569 pdf