Part Number: KT819
Function: NPN Transistor
Package: TO-220 Type
Manufacturer: ETC
Images:
Description
KT819 is silicon bipolar epitaxial-planar n-p-n transistor.
Purpose n-p-n silicon epitaxial-planar transistor in a plastic case. Designed for use in key and linear circuits; other radio-electronic equipment manufactured for the national economy Number of technical conditions • аАО.336.189 TU / 02 Features • operating temperature range from -45 to + 100 °С Case design • plastic case KT-28 (TO-220) Pin assignment Conclusion No.
1 No. 2 No. 3 Purpose Emitter Collector Base KT819 (January 2011, edition 1.0) 1 Table 1. The main electrical parameters of KT819 at Tacr. environment = + 25 °C Parameters Reverse collector current Static current transfer coefficient KT819A, V KT819B KT819G Boundary voltage
KT819A KT819B KT819V KT819G Collector-emitter saturation voltage Designation rev. mA Measurement modes Ukb=40V Ukb = 5 V, Ie =5 A Min Max 1 15 20 12 V Ie =0.3 A, ti = 270÷330 µs 25 40 60 80 2 Ukeo gr Uke us V Ik=5A, Ib=0.5A Parameters Collector-emitter DC voltage at Reb ≤ 1 kΩ KT819A KT819B KT819V KT819G Emitter-base voltage Collector DC current Collector pulse current ti ≤ 10 ms, Q ≥ 100 Maximum allowable base DC current Base pulse current ti ≤ 10 ms, Q ≥ 100 bldg. ≤ 25 °C Uke max Unit. rev. V Value 40 50 70 100 5 10 15 3 5 60 Ueb max Ik max Iki max Ib max Ibi max Pk max V A A A A W KT819 (January 2011, edition 1.0) 2 JSC “INTEGRAL”, Minsk, Republic of Belarus Attention! This technical specification is for guidance only and is not intended to replace an actual copy of the specification or product label.
