Part Number: C5149, 2SC5149
Function: 600V, 8A, NPN Transistor
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
C5149 is 600V, 8A, Silicon NPN Transistor.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. High Speed : tf = 0.2 us ( Typ. )
2. High Voltage: Vcbo = 1500 V
3. Low Saturation Voltage : Vce(sat) = 5 V ( Max. )
4. Built-in Damper Type
5. Collector Metal ( Fin ) is Fully Covered with Molde Resin.
7. Storage Temperature: Tsg = -55 ~ +150°C
1. Horizontal Deflection Output For Medium Resolution
2. Display, Color TV