C5149 Datasheet PDF – 600V, 8A, NPN Transistor, 2SC5149

Part Number: C5149, 2SC5149

Function: 600V, 8A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:C5149 pdf pinout


C5149 is 600V, 8A, Silicon NPN Transistor.

A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.


1. High Speed : tf = 0.2 us ( Typ. )

2. High Voltage: Vcbo = 1500 V

3. Low Saturation Voltage : Vce(sat) = 5 V ( Max. )

4. Built-in Damper Type

5. Collector Metal ( Fin ) is Fully Covered with Molde Resin.

C5149 datasheet transistor

Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 8 A
5. Collector Power Dissipation : Pc = 50 W ( Tc=25°C )
6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. Horizontal Deflection Output For Medium Resolution

2. Display, Color TV

C5149 PDF Datasheet