Part Number: MDD3754
Function: -40V, -24.4A, P-Channel Trench MOSFET
Package: TO-252 (D-PAK) Type
Manufacturer: MagnaChip
Images:
Description
The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. A P-channel trench MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that uses a trench structure in its semiconductor material to achieve its functionality.
Features
1. VDS = -40V
2. ID = -24.4A @VGS = -10V
3. RDS(ON) < 43mΩ @ VGS = -10V < 58mΩ @ VGS = -4.5V
P-channel trench MOSFETs combine the characteristics of P-channel MOSFETs with the benefits of trench technology. These transistors are commonly used in power management and switching applications, especially when low on-resistance, high efficiency, and fast switching speeds are important. They are often used in various electronic devices, including power supplies, motor drives, and other applications where efficient control of current flow is crucial.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 40 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = – 24.4 A
4. Total Power Dissipation: Pd = 41.7 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Inverters
2. General purpose applications
MDD3754 PDF Datasheet
