Part Number: MDD5N40
Function: 400V, 3.4A, N-Channel MOSFET
Package: D-Pak, L-Pak Type
Manufacturer: MagnaChip
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Description
The MDI5N40 / MDD5N40 use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N40 is suitable device for SMPS, HID and general purpose applications. Features VDS = 400V ID = 3.4A RDS(ON) ≤ 1.6Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V D I-PAK G D S (TO-251) G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAR EAS TJ, Tstg Rating 400 ±30 3.4 2.15 13.6 45 0.36 4.5 4.5 170 -55~150 Unit V V A A A W W/ oC V/ns mJ mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec. 2011. Version 1.5 1 Symbol RθJA RθJC Rating 110 2.75 Unit oC/W MagnaChip Semiconductor Ltd. MDI5N40 N-channel MOSFET 400V Ordering Information Part Number MDI5N40TH MDD5N40RH Temp. Range -55~150oC -55~150oC Package I-Pak D-Pak Packing Tube Reel RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance gfs Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Test Condition ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 400V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 1.7A VDS = 30V, ID = 1.7A VDS = 320V, ID = 3.4A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 200V, ID = 3.4A, RG = 25Ω(3) IS = 3.4A, VGS = 0V IF = 3.4A, dl/dt = 100A/µs(3) Note : 1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤3.4A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C Min 400 3.0 – – – – Typ 1.2 2.0 9 2.5 4 290 3 46 12 25 20 30 3.4 200 1.0 Max Unit V 5.0 1 µA 100 nA 1.6 Ω -S nC pF ns -A 1.4 V ns µC Dec. 2011. Ve […]
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