Part Number: RJP2557DPK
Function: 270V, 50A, IGBT for PDP
Package: TO-3P Type
Manufacturer: Renesas Technology
RJP2557DPK is 270V, 50A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Power supply IGBT Product Lineup Power MOSFET P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P Package LDPAK LDPAK TO-3PFM TO-3PFM TO-3PFM TO-3PFM TO-3P TO-3P LDPAK TO-3P TO-3P IGBT (High-speed type)
P/N GN4030V5AB GN6030V5AB RJP3053DPP RJP3063DPP RJP3054DPP RJP3064DPP RJP3055DPP RJP3065DPP RJP4065DPP RJP2557DPK RJP3056DPK RJP3057DPK RJP3066DPK RJP3067DPK RJP4067DPK VCES (V) 400 600 300 300 300 300 300 300 400 270 300 300 300 300 400 Maximum Rating IC Package TO-220AB TO-220AB TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P ©2010. Renesas Electronics Corporation, All rights reserved. Free April 2010 Renesas Electronics Power MOSFETs for Backlight Inverter Achieve Miniaturization and Higher Efficiency Features Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Vin Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG Half Bridge Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG HRV103A Push/Pull Vin Nch HRV103A HAT2215R(80V) Dual Nch in 1PKG Nch Vds(peak)=Vin + V(surge) Nch Vds(peak)=Vin + V(surge) Nch Vds(peak)=2Vin + V(surge) Product Lineup Max.Ratings No 1 2 3 4 5 Type No HAT2199R HAT2208R HAT2256R HAT1131R HAT1132R VDSS （V) 1 […]