30F124 Datasheet – GT30F124, 300V, 200A, IGBT – Toshiba

Part Number: GT30F124

Function: Discrete 300V, 200A, IGBT ( Insulated-Gate Bipolar Transistor )

Package: TO-220SIS Type

Manufacturer: Toshiba

Image:

30F124 Image

Description

IGBT 30F124 is a high voltage and high current Insulated Gate Bipolar Transistor (IGBT) used for power electronics applications. It is commonly used for motor control, AC/DC conversion, and power switching applications due to its high voltage and current rating, fast switching speed, and low losses. It has a maximum voltage rating of 300V and a maximum current rating of 200A, making it suitable for medium to high power applications. IGBTs are widely used in various applications, including power electronics, motor drives, renewable energy systems, and electric vehicle inverters.

 

Features of the Toshiba Discrete IGBT

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

30F124 Transistor ( 300V 200A IGBT )

30F124 Toshiba

 

30F124 Datasheet

Applications

(1) Plasma display panels

Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.

IGBTs are commonly used in power conversion systems, such as inverters, where they switch high currents on and off rapidly to convert DC power to AC power or vice versa.

Pinout

igbt pinout

Other data sheets are available within the file: 3OF124, GT3OF124

Related Posts

 

Download 30F124 Datasheet PDF


30F124 pdf

 

 

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RJP30H2A PDF Datasheet – 360V, N-Ch, IGBT, Transistor

This post explains for the IGBT.

The Part Number is RJP30H2A, RJP30H2DPK-M0.

The package is TO263-3L, D2PAK, TO-3P

The function of this semiconductor is Silicon N Channel IGBT.

Manufacturer: Renesas

Preview images :

1 page
RJP30H2A pdf datasheet

Description

RJP30H2A is 360V, 35A, Silicon N Channel IGBT.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES = 1 μA max

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High speed power switching

 

2 page
RJP30H2A replacement

RJP30H2A PDF Datasheet

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