12MBI75VN-120-50 Datasheet PDF – IGBT, 1200V, 75A

Part Number: 12MBI75VN-120-50

Function: IGBT Module / 1200V, 75A / Solder pin

Manufacturer: Fuji Electric

Image and Pinouts:

12MBI75VN-120-50 datasheet

Description

The 12MBI75VN-120-50 is a high-performance IGBT power module rated at 1200V and 75A, designed for advanced power conversion systems. It integrates a 3-phase Active Neutral Point Clamped (AT-NPC) 3-level topology using Fuji Electric’s proprietary reverse-blocking IGBT (RB-IGBT) technology. This architecture significantly reduces switching and conduction losses while enabling compact and efficient inverter designs.

1. Significant Low Power Loss and Size Reduction of Equipment

2. Integrates 3-Phase of AT-NPC 3-level conversion circuitry realized with Fuji Electric’s proprietary reverse-blocking IGBT(RB-IGBT) technology reducing large amout of power loss.

3. Two Types of Terminal Pins Available

4. Provides product lineups equipped with solder pins or press-fit pins depending on assembly line.

Features

  • Integrated 3-phase AT-NPC 3-level converter topology
  • Utilizes reverse-blocking IGBT (RB-IGBT) technology
  • Significantly reduced switching and conduction losses
  • Low inductance module structure for improved switching performance
  • High efficiency operation
  • Available with solder pins or press-fit pins for flexible assembly
  • Compact module enabling system size reduction

Pinout

12MBI75VN-120-50 pinout

Typical Circuit Usage

  • 3-phase inverter systems using 3-level topology
  • Motor drive inverters (industrial automation)
  • Renewable energy power converters (solar inverters)
  • Power conditioning systems
  • High-efficiency UPS systems

How to Choose This Part

  • Select for applications requiring high efficiency and reduced switching loss
  • Ideal for 3-level inverter topologies (NPC/ANPC)
  • Ensure gate driver compatibility with RB-IGBT characteristics
  • Evaluate thermal and mechanical constraints of module integration
  • Compare with standard IGBT modules if simpler topology is acceptable

Applications

  • Motor drive inverters
  • Power conditioners
  • Industrial automation systems
  • Renewable energy converters
  • Medium-power inverter platforms

Alternative / Equivalent Products

  • FF75R12RT4 – Infineon 1200V 75A IGBT module
  • SKM75GB12T4 – SEMIKRON IGBT module
  • CM75DU-12H – Mitsubishi Electric IGBT module
  • FS75R12KT4 – Infineon IGBT module
  • 7MBR75VN120 – Fuji Electric standard IGBT module

Other data sheets are available within the file:

12MBI100VX-120-50, 12MBI50VN-120-50, 12MBI50VX-120-50, 12MBI75VN-120-50

 

12MBI75VN-120-50 Datasheet PDF Download


12MBI75VN-120-50 pdf

GB6B60KD Datasheet PDF – 600V, 13A, IGBT, Transistor

Part Number: GB6B60KD, IRGB6B60KD

Function: 600V, 13A, IGBT, Transistor

Package: TO-220AB Type

Manufacturer: International Rectifier

Image:
GB6B60KD datasheet

Description

GB6B60KD is 600V, 13A, N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.

Benefits:

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation

Pinout

GB6B60KD pinout igbt

Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 13 A

4. Maximum Power Dissipation: Pd = 90 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRGB6B60KDPBF, GS6B60KD, GSL6B60KD,  IRGS6B60KD

GB6B60KD Datasheet PDF Download


GB6B60KD pdf