IRG4BC30KD Datasheet – 600V, 16A, Ultra Fast IGBT – IR

What is IRG4BC30KD?

This is a high-speed insulated gate bipolar transistor (IGBT) designed for use in high-power switching applications. It has a voltage rating of 600V and a current rating of 16A.

Function: 600V, 16A, IGBT

Package: TO-220AB Type

International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.


IRG4BC30KD datasheet pinout


This is 600V, 16A, IGBT With Ultrafast Soft Recovery Diode. It is housed in a TO-220AB package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is commonly used in applications such as motor control circuits, power supplies, and welding equipment.


1. Latest generation 4 IGBTs offer highest power density motor controls possible

2. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI andswitching losses

3. This part replaces the IRGBC30KD2 and IRGBC30MD2 products


G4BC30KD datasheet pinout



1. High short circuit rating optimized for motor control, tsc=10µs, @360V VCE(start), TJ= 125°C,VGE= 15V

2. Combines low conduction losses with high switching speed

3. Tighter parameter distribution and higher efficiency than previous generations

4 IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes


Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A (Tc = 100°C)

4. Collector dissipation : Pc = 100 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



IRG4BC30KD Datasheet PDF


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30F132 Datasheet – 360V, 250A, IGBT, TO220-SM – Toshiba

What is 30F132?

This is Insulated Gate Bipolar Transistor. This is widely used in high-power applications where high voltage and high current handling capabilities are required. IGBTs combine the high-speed switching capability of a MOSFET with the high voltage handling capability of a bipolar junction transistor (BJT). IGBTs are widely used in high-power applications where high voltage and high current handling capabilities are required.

Function : 360V, 250A, IGBT

Package : TO-263, TO-220SM(MXN) Type

Manufacturer: Toshiba


30F132 IGBT


IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

Ordering Informations:

30F132 Toshiba


1. IGBTs also featuring fast switching
2. Low collector-emitter saturation voltage even in the large current area
3. IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
4. High input impedance allows voltage drives
5. Available in a variety of packages


Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 360 V

2. Collector Current: Ic = 250 A

3. Collector Dissipation: Pc = 140 W


30F132 pinout


1. PDP sustain, energy recovery and separation circuits

Other data sheets are available within the file: GT30F132

30F132 Datasheet PDF

30F132 pdf

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