Strobe flashes typically require a brief but intense burst of electrical energy to discharge the flash capacitor through the flash tube or LEDs. N-channel IGBTs are well-suited for handling high current and voltage, making them suitable for driving the flash circuitry.
Part Number: RJP4003ASA
Function: 400V, 150A, N-channel IGBT.
Package: TSSOP 8 Pin Type
Manufacturer: Renesas Technology
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Description
RJP4003ASA is N-channel 400V, 150A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Using an N-channel Insulated Gate Bipolar Transistor (IGBT) for a strobe flash circuit can be a suitable choice, especially in high-power applications. IGBTs are commonly used in various power electronics applications due to their ability to handle high current and voltage levels while being controlled by a low-power signal.
Features:
• Small surface mount package (TSSOP-8)
• VCES : 400 V
• ICM : 150 A
• Drive voltage : 4 V
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter Voltage: Vces = 400 V
2. Gate to emitter Voltage: Vges = ± 6 V
3. Collector Current: Ic = 150 A
4. Junction temperature: Tj = 150 °C
5. Storage temperature: Tstg = -40 to +150 °C
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