RJP4003ASA PDF- N-channel 400V, 150A, IGBT

Strobe flashes typically require a brief but intense burst of electrical energy to discharge the flash capacitor through the flash tube or LEDs. N-channel IGBTs are well-suited for handling high current and voltage, making them suitable for driving the flash circuitry.

Part Number: RJP4003ASA

Function: 400V, 150A, N-channel IGBT.

Package: TSSOP 8 Pin Type

Manufacturer: Renesas Technology

Images:RJP4003ASA pinout datasheet


RJP4003ASA is N-channel 400V, 150A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Using an N-channel Insulated Gate Bipolar Transistor (IGBT) for a strobe flash circuit can be a suitable choice, especially in high-power applications. IGBTs are commonly used in various power electronics applications due to their ability to handle high current and voltage levels while being controlled by a low-power signal.


• Small surface mount package (TSSOP-8)
• VCES : 400 V
• ICM : 150 A
• Drive voltage : 4 V

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 400 V

2. Gate to emitter Voltage: Vges = ± 6 V

3. Collector Current: Ic = 150 A

4. Junction temperature: Tj = 150 °C

5. Storage temperature: Tstg = -40 to +150 °C



RJP4003ASA pdf igbt

RJP4003ASA PDF Datasheet

RJP4003ASA pdf