AT28C010 Datasheet – 1 Megabit, CMOS EEPROM ( PDF )

Part Number: AT28C010

Function: 1 Megabit (128K x 8) paged CMOS EEPROM

Package: 32-Lead PLCC, 32-Lead TSOP Type

Manufacturer: Atmel Corporation


AT28C010 datasheet



The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 µA.

The device is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128‑byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations.



• Fast Read Access Time – 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
– 200 µA CMOS Standby Current
• Hardware and Software Data Protection

Other data sheets are available within the file:

AT28C010-12JU, AT28C010-12TU, AT28C010-15JU, AT28C010-15TU


AT28C010 Datasheet PDF Download

AT28C010 pdf