Part Number: EGP10F

Function: 1A, 300V, Glass Passivated High Efficiency Rectifier

Package: DO-41 Type

Manufacturer: ON Semiconductor

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Description

EGP10F is a high-efficiency, ultrafast recovery rectifier diode rated for 1A average current and 300V reverse voltage. It is optimized for high-frequency switching applications where low switching loss and fast recovery are critical.

Features

• Superfast recovery time (typically tens of ns range)
• Low forward voltage drop (improves efficiency)
• Low reverse leakage current
• High surge current capability
• High reliability under switching stress

Functional Characteristics

• Designed for fast switching → minimizes reverse recovery losses
• Suitable for high-frequency SMPS topologies
• Better efficiency compared to standard rectifier diodes
• Handles repetitive switching stress in inductive environments

Comparison with Other Diodes

• Standard Rectifier (e.g., 1N4007): Slow (µs range), unsuitable for high frequency
• Fast Recovery Diode: Improved, but slower than EGP series
• Ultrafast (EGP10F): Ideal for tens to hundreds of kHz SMPS
• Schottky: Lower VF but lower voltage rating (typically <200V)

Design Considerations

• Use in high-frequency switching nodes (flyback, forward converters)
• Minimize loop inductance to reduce voltage spikes
• Ensure adequate thermal dissipation (PCB copper area)
• Consider snubber network if high dv/dt ringing occurs
• Verify reverse recovery softness for EMI performance

Typical Applications

• Switch Mode Power Supplies (SMPS)
• Freewheeling / flyback diodes
• DC/DC converters
• Snubber and clamp circuits
• High-frequency rectification

Equivalent / Alternative Parts

• UF4004 ~ UF4007 (ultrafast rectifiers, similar class)
• FR107 (fast recovery diode, slower alternative)
• HER108 (high efficiency rectifier)
• MUR110 / MUR120 (higher performance ultrafast diodes)

Other data sheets are available within the file:

EGP10A, EGP10B, EGP10C, EGP10D

 

EGP10F Datasheet PDF Download

Part Number: 1R5GU41

Function: 1.5A, 400V, Fast Recovery Rectifier, Diode

Package: 3-4B1A, DO-31 Type

Manufacturer: Toshiba

Image and Pinouts:

Description

1R5GU41 diode is Silicon Diffused Type Duper Fast Recovery Rectifier. Ultra-Fast Recovery: With a 100 ns reverse-recovery time, it’s well-suited for high-frequency applications where efficiency and low switching losses are critical.

 

Features

1. Repetitive Peak Reverse Voltage  : VRRM = 400V

2. Average Forward Current  : IF (AV) = 1.5A (Ta = 25°C)

3. Very Fast Reverse−Recovery Time  : trr = 100ns

 

Absolute maximum ratings

1. Repetitive Peak Reverse Voltage : VRRM = 400 V

2. Average Forward Current : IF (AV) = 1.5 A

3. Peak One Cycle Surge Forward Current  (Non−Repetitive) : IFSM = 60 (50Hz), 66 (60Hz) A

4. Junction Temperature : Tj = – 40 ~ 150 °C

5. Storage Temperature Range : Tstg = – 40 ~ 150 °C

 

Applications

1. SMPS / DC–DC Converters: Fast recovery ensures reduced switching losses and minimal EMI.

2. Flyback / Boost Converters: Acts as a fast freewheeling or output rectifier.

3. Snubber and Hard-Switching Circuits: Where brief reverse currents and quick transitions demand sharp recovery.

 

Other data sheets are available within the file: 1R5GU

1R5GU41 Datasheet PDF Download