The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Function: 30V N-Channel MOSFET
Package: DFN5X6 Type
Manufacturer: Alpha and Omega Semiconductor ( www.aosmd.com )
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Description
The AON6414A is a 30 V N-channel MOSFET built using trench technology, offering very low on-resistance and low gate charge. It delivers good performance even at 4.5 V gate drive, making it suitable for power switching in battery and DC-DC converter applications. Packaged in a DFN 5×6 layout, it is ideal for compact surface mount designs.
Pinout:
Features
1. 30 V N-channel MOSFET (trench technology)
2. High current capability: up to 30 A (case)
3. RDS(ON) (at VGS=10V) < 8mΩ
4. RDS(ON) (at VGS=4.5V) < 10.5mΩ
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 30 A
4. Total Power Dissipation: Pd = 31 W
5. Avalanche energy: Ear = 31 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
Applications
1. Power switches in DC-DC converters and buck/boost regulators
2. Load switches in battery-powered systems
3. High efficiency switching in portable electronics
4. High current switching where compact footprint is necessary
Other data sheets are available within the file: 6414A
AON6414A Datasheet PDF Download
